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hexfet ? power mosfet descriptionthis hexfet ? power mosfet's in a dual so-8 package utilize the lastest processing techniques to achieve extremelylow on-resistance per silicon area. additional features of these hexfet power mosfet's are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating. these benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. the efficient so-8 package provides enhanced thermal characteristics and dual mosfet die capability making it ideal in a variety of power applications. this dual, surface mount so-8 can dramatically reduce board space and is also available in tape & reel. www.irf.com 1 benefits advanced process technology dual n-channel mosfet ultra low on-resistance 175c operating temperature repetitive avalanche allowed up to tjmax lead-free IRF7103QPBF v dss r ds(on) max (m i d 50v 130@v gs = 10v 3.0a 200@v gs = 4.5v 1.5a d1 d1 d2 d2 g1s2 g2 s1 top view 8 12 3 4 5 6 7 so-8 absolute maximum ratings parameter units i d @ t a = 25c continuous drain current, v gs @ 4.5v i d @ t a = 70c continuous drain current, v gs @ 4.5v a i dm pulsed drain current p d @t a = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as sin g le pulse avalanche ener gy mj i ar avalanche current a e ar repetitive avalanche ener gy mj dv/dt peak diode recovery dv/dt v/ns t j operating junction and c t stg storage temperature range thermal resistance parameter typ. max. units r jl junction-to-drain lead CCC 20 c/w r ja junction-to-ambient CCC 62.5 -55 to + 175 2.4 1612 see fig. 16c, 16d, 19, 20 20 22 max. 3.0 2.5 25 downloaded from: http:///
IRF7103QPBF 2 www.irf.com parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) showing the i sm pulsed source current integral reverse (body diode) p-n junction diode. v sd diode forward voltage CCC CCC 1.2 v t j = 25c, i s = 1.5a, v gs = 0v t rr reverse recovery time CCC 35 53 ns t j = 25c, i f = 1.5a q rr reverse recovery charge CCC 45 67 nc di/dt = 100a/s source-drain ratings and characteristics 12 3.0 repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle
surface mounted on 1 in square cu board starting t j = 25c, l = 4.9mh r g = 25 ? , i as = 3.0a. (see figure 12). i sd 2.0a, di/dt 155a/s, v dd v (br)dss , t j 175c limited by t jmax , see fig.16c, 16d, 19, 20 for typical repetitive avalanche performance. parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 50 CCC CCC v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.057 CCC v/c reference to 25c, i d = 1ma CCC CCC 130 v gs = 10v, i d = 3.0a CCC CCC 200 v gs = 4.5v, i d = 1.5a v gs(th) gate threshold voltage 1.0 CCC 3.0 v v ds = v gs , i d = 250a g fs forward transconductance 3.4 CCC CCC s v ds = 15v, i d = 3.0a CCC CCC 2.0 v ds = 40v, v gs = 0v CCC CCC 25 v ds = 40v, v gs = 0v, t j = 55c gate-to-source forward leakage CCC CCC 100 v gs = 20v gate-to-source reverse leakage CCC CCC -100 v gs = -20v q g total gate charge CCC 10 15 i d = 2.0a q gs gate-to-source charge CCC 1.2 CCC nc v ds = 40v q gd gate-to-drain ("miller") charge CCC 2.8 CCC v gs = 10v t d(on) turn-on delay time CCC 5.1 CCC v dd = 25v t r rise time CCC 1.7 CCC i d = 1.0a t d(off) turn-off delay time CCC 15 CCC r g = 6.0 ? t f fall time CCC 2.3 CCC r d = 25 ? c iss input capacitance CCC 255 CCC v gs = 0v c oss output capacitance CCC 69 CCC pf v ds = 25v c rss reverse transfer capacitance CCC 29 CCC ? = 1.0mhz electrical characteristics @ t j = 25c (unless otherwise specified) m ? r ds(on) static drain-to-source on-resistance i dss drain-to-source leakage current s d g downloaded from: http:///
IRF7103QPBF www.irf.com 3 fig 3. typical transfer characteristics fig 2. typical output characteristics fig 1. typical output characteristics fig 4. normalized on-resistance vs. temperature -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 3.0a 3.0 6.0 9.0 12.0 15.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 25v 20s pulse width 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 25c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v downloaded from: http:///
IRF7103QPBF 4 www.irf.com fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 8. maximum safe operating area fig 7. typical source-drain diode forward voltage 0.1 1 10 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 175 c j t = 25 c j 0 1 10 100 1000 v ds , drain-tosource voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 0 3 6 9 12 0 3 6 9 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 2.0a v = 10v ds v = 25v ds v = 40v ds 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd downloaded from: http:///
IRF7103QPBF www.irf.com 5 fig 11. typical effective transient thermal impedance, junction-to-ambient fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90%10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
1 0.1 %

+ - 25 50 75 100 125 150 175 0.0 0.6 1.2 1.8 2.4 3.0 t , case temperature ( c) i , drain current (a) c d 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + t a downloaded from: http:///
IRF7103QPBF 6 www.irf.com fig 13. typical on-resistance vs. drain current fig 12. typical on-resistance vs. gate voltage fig 14. typical threshold voltage vs. junction temperature typical power vs. time 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 -v gs, gate -to -source voltage (v) 0.09 0.10 0.11 0.12 0.13 0.14 0.15 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) i d = 3.0a -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.3 1.5 1.8 2.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 0 5 10 15 20 25 30 35 40 i d , drain current (a) 0.000 0.500 1.000 1.500 2.000 2.500 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( ? ) v gs = 10v v gs = 4.5v 1.00 10.00 100.00 1000.00 time (sec) 0 10 20 30 40 50 60 70 p o w e r ( w ) downloaded from: http:///
IRF7103QPBF www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + -
fig 17. gate charge test circuit fig 18. basic gate charge waveform fig 16a. maximum avalanche energy vs. drain current fig 16d. unclamped inductive waveforms fig 16c. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 12 24 36 48 60 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.2a 2.5a 3.0a downloaded from: http:///
IRF7103QPBF 8 www.irf.com fig 19. typical avalanche current vs.pulsewidth fig 20. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-08 1.0e-07 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 tav (sec) 0.01 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 0.10 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 5 10 15 20 25 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 10% duty cycle i d = 3.0a downloaded from: http:///
IRF7103QPBF www.irf.com 9 so-8 part marking e1 de y b aa1 h k l .189 .1497 0 .013 .050 bas ic .0532 .0040 .2284 .0099 .016 .1968 .1574 8 .020 .0688 .0098 .2440 .0196 .050 4.80 3.80 0.33 1.35 0.10 5.80 0.25 0.40 0 1.27 bas ic 5.00 4.00 0.51 1.75 0.25 6.20 0.50 1.27 mi n max millimeters inches mi n max dim 8 e c .0075 .0098 0.19 0.25 .025 bas ic 0.635 bas ic 87 5 65 d b e a e 6x h 0.25 [.010] a 6 7 k x 45 8x l 8x c y 0.25 [.010] cab e1 a a1 8x b c 0.10 [.004] 43 12 footprint 8x 0.72 [.028] 6.46 [.255] 3x 1.27 [.050] 4. outline conforms to jedec outline ms-012aa. not es : 1. dimensioning & t olerancing per as me y14.5m-1994. 2. cont rol ling dimens ion: mil lime t er 3. dimensions are shown in millimet ers [inches]. 5 dimens ion doe s not include mol d prot rus ions . 6 dimens ion doe s not include mol d prot rus ions . mold prot rusions not t o exceed 0.25 [.010]. 7 dimension is t he lengt h of lead f or soldering t o a s ubst rat e. mold prot rusions not t o exceed 0.15 [.006]. 8x 1.78 [.070] example: t his is an irf 7101 (mos fet ) international rect ifier logo f 7101 yww xxxx part number lot code ww = we e k y = last digit of the year dat e code (yww) so-8 package outlinedimensions are shown in millimeters (inches) notes: 1. for an automotive qualified version of this part please see http://www.irf.com/product-info/auto/ 2. for the most current drawing please refer to ir website at http://www.irf.com/package/ downloaded from: http:///
IRF7103QPBF 10 www.irf.com 330.00 (12.992) max. 14.40 ( .566 ) 12.40 ( .488 ) notes : 1. controlling dimension : millimeter. 2. outline conforms to eia-481 & eia-541. feed direction terminal number 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) notes: 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters(inches). 3. outline conforms to eia-481 & eia-541. so-8 tape and reel ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 08/2010 data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on irs web site. downloaded from: http:///

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